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Publication List

We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here. Want to discuss your idea with us? Pls send email：info@enkris.com。

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si NadimChowdhury,JoriLemettinen,QingyunXie,YuhaoZhang,NitulS.Rajput,PengXiang,KaiCheng,SamiSuihkonen,HanWuiThenandTomásPalacio IEEE Electron Device Letters, 40(7), 1036 (2019)
Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance JunMa;GeorgiosKampitsis;PengXiang;KaiCheng;ElisonMatioli IEEE Electron Device Letters, 40(2), 275 (2019)
Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-based AlGaN/GaN MIS-HEMT YongleQi,YumengZhu,JiangZhang,XinpengLin,KaiCheng,LingliJiang,HongyuYu IEEE Transactions on Electron Devices, 65(5), 1759-1764 (2018)
Characterization of 880 V Normally-OFF GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process MingTao,ShaofeiLiu,BingXie,ChengP.Wen,JinyanWang,YilongHao,WengangWu,KaiCheng,BoShen,MaojunWang IEEE Transactions on Electron Devices, 65(4), 1453-1457 (2018)
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT RonghuiHao,NingXu,GuohaoYu,LiangSong,FuChen,JieZhao,XuguangDeng,XiangLi,KaiCheng,KaiFu,YongCai,XinpingZhang,andBaoshunZhang IEEE Transactions on Electron Devices, 65(4), 1314-1320 (2018)
10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current RonghuiHao,DongdongWu,KaiFu,LiangSong,FuChen,JieZhao,ZhongkaiDu,BingliangZhang,QilongWang,GuohaoYu,KaiCheng,YongCai,XinpingZhang,BaoshunZhang Electronics Letters, 54 (13), 848 (2018)
820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2 R.A.Khadar,C.Liu,L.Zhang,P.Xiang,K.Cheng,andE.Matioli IEEE Electron Device Letters, 39(3), 401 – 404 (2018)