第4页_Publication List_Innovation_Enkris Semiconductor Inc.

INNOVATION

Publication List

We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here. Want to discuss your idea with us? Pls send email：info@enkris.com。

720V/0.35mΩ·cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si substrates and buffer layers YuhaoZhang,MengyangYuan,NadimChowdhury,KaiCheng,andTomasPalacios IEEE Electron Device Letters, 39(5), 715-718 (2018)
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance JunMa,CatherineErine,PengXiang,KaiCheng,andElisonMatioli Appl. Phys. Lett. 113, 242102 (2018)
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors NingXu,RonghuiHao,FuChen,XiaodongZhang,HuiZhang,PeipeiZhang2,XiaoyuDing,LiangSong,GuohaoYu,KaiCheng,YongCaiandBaoshunZhang Appl. Phys. Lett. 113, 152104 (2018)
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy TianLiDuan,JiShengPan,NingWang,KaiCheng&HongYuYu Nanoscale Research Letters volume 12, 499 (2017)
The Growth Technology of High-Voltage GaN on Silicon PengXiang,LiyangZhang,KaiCheng Gallium Nitride Power Devices; Edited By Hongyu Yu, Tianli Duan, Jenny Stanford Publishing
Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature NingWang,HuiWang,XinpengLin,YongleQi,TianliDuan,LingliJiang,ElinaIervolino,KaiChengandHongyuYu AIP Advances 7, 095317 (2017)
A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices ShuxunLin,MaojunWang,FeiSang,MingTao,ChengP.Wen,BingXie,MinYu,JinyanWang,YilongHao,WengangWu,JunXu,KaiCheng,andBoShen IEEE Electron Device Lett. 37, 377 (2016)