Publication List
We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here. Want to discuss your idea with us? Pls send email：info@enkris.com。
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A gallium nitride HEMT that enhances.
Parker,M.
Nature Electronics 4, 858 (2021).
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Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV
M.Xiao1,Y.Ma,Z.Du,V.Pathirana,K.Cheng,A.Xie,E.Beam,Y.Cao,F.Udrea,H.Wang,Y.Zhang
2021 IEEE International Electron Devices Meeting (IEDM)
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10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes
MingXiao; YunweiMa; KaiLiu; KaiCheng; YuhaoZhang
IEEE Electron Device Letters, vol. 42, no. 6, pp. 808-811, June 2021
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Multi-channel nanowire devices for efficient power conversion
L.Nela,J.Ma,C.Erine,P.Xiang,T.-H.Shen,V.Tileli,T.Wang,K.Cheng&E.Matioli
Nature Electronics volume 4, pages 284-290(2021)
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Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
N.Chowdhury,Q.Xie,M.Yuan,K.Cheng,H.W.ThenandT.Palacios,
IEEE Electron Device Letters, vol. 41, no. 6, pp. 820-823, June 2020
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GaN Nanowire Field Emitters with a Self-Aligned Gate Process
P.Shihetal.,
2020 Device Research Conference (DRC), Columbus, OH, USA, 2020, pp. 1-2
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Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode with Improved On-Current and Ideality Factor
Zhang,Yanni;Zhang,Jincheng;Liu,Zhihong;Xu,Shengrui;Cheng,Kai;Ning,Jing;Zhang,Chunfu;Zhang,Lei;Ma,Peijun;Zhou,Hong
IEEE Electron Device Letters, vol. 41, no. 3, pp. 457-460, March 2020
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