Enkris Semiconductor, Inc.

About Enkris

Founded in March 2012 by Dr. Kai Cheng, a world-class pioneer in GaN-on-Si Epitaxial technology, Enkris Semiconductor, Inc. is located in Suzhou Industrial Park, with an advanced gallium nitride epitaxial material development and manufactory base. Enkris is dedicated to developing and producing high-quality GaN epitaxial materials for the applications like power electronics, micro-displays, etc. Enkris is also the only supplier globally which is able to provide 300mm GaN epi-wafers. This represents Enkris’ leading position in the GaN industry internationally.

2012
Founded in 2012
ISO 9001
ISO 9001: 2015 certificated
IATF16949: 2016 certificated
600
~600patentsfiled

Products

Professional manufacturer of gallium nitride materials

For Power

• GaN-on-Si (100mm,150mm,200mm,300mm)

• D-mode and E-mode

• Breakdown Voltage available from 200V to 1200V

For LED

• GaN-on-Sapphire (50.8mm,100mm,150mm)

• GaN-on-Si (100mm,150mm,200mm,300mm)

• UVC, Near-UV, Blue, Green & Red

Other customization

News

2022-04-18

Enkris Semiconductor releases Full Color GaN® series and expands LED wafer size to 300mm for Micro-LED applications Suzhou/China, April 8th, 2022 - Enkris Semiconductor, an expert and pure epi-foundry of GaN wafers, releases its disruptive Full Color GaN® RGB series of products with wafer size up to 300mm for Micro-display industry . see details +

2021-09-23

CMOS Compatible High-voltage GaN-on-Silicon HEMT reaches 300mm An GaN wafer epi-foundry with headquarters located at Suzhou Industrial Park, China, Enkris Semiconductor announced that it has demonstrated a series of high quality 300mm GaN-on-Si HEMT epiwafers of excellent thickness uniformity and low wafer bow for 200V, 650V and 1200V power applications, paving the way for device processing using more sophisticated 300mm CMOS-compatible lines. see details +

2019-01-24

Multi-channel tri-gate III-nitride high-electron-mobility transistors on silicon École Polytechnique Fédérale de Lausanne (EPFL) in Switzerland and Enkris Semiconductor Inc in China used a material structure consisting of five parallel layers of a 10nm aluminium gallium nitride (AlGaN) barrier, 1nm AlN spacer and 10nm GaN channel (Figure 1). The barrier was silicon doped at a partial level of 5x1018/cm3 to enhance conductivity ……（Please refer to http://www.semiconductor-today.com/news_items/2019/jan/ecole_240119.shtml for details）. see details +

2014-07-03

Enkris Semiconductor Demonstrates High Voltage GaN HEMT Structures on 200mm Silicon with AIXTRON Reactor Aachen/Suzhou, July 03, 2014 – Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon (GaN-on-Si) by using an AIXTRON CRIUS® II Close Coupled Showerhead® Reactor. see details +

Contact us

Telephone：0512 62706800
Fax：0512 62709251
Email：info@enkris.com
Address：Room 517A，NW-20，Nanopolis Suzhou, 99 Jinji Avenue, Suzhou Industrial Park, 215123, China