Publication List
We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here. Want to discuss your idea with us? Pls send email：info@enkris.com。
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Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Xiao,Ming;Du,Zhonghao;Xie,Jinqiao;Beam,Edward;Yan,Xiaodong;Cheng,Kai;Wang,Han;Cao,Yu;Zhang,Yuhao;
Appl. Phys. Lett. 116, 053503 (2020)
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Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si
Liu,Meng-Han;Chen,Peng;Xie,Zi-Li;Xiu,Xiang-Qian;Chen,Dun-Jun;Liu,Bin;Han,Ping;Shi,Yi;Zhang,Rong;Zheng,You-Dou;Cheng,Kai;Zhang,Liyang;
2020 Chinese Phys. Lett. 37 054204
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High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si
Liu,Menghan;Chen,Peng;Xie,Zili;Xiu,Xiangqian;Chen,Dunjun;Liu,Bin;Han,Ping;Shi,Yi;Zhang,Rong;Zheng,Youdou;Cheng,Kai;Zhang,Liyang;
2020 Chinese Physics B 29 084203
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Conformal passivation of Multi-Channel GaN power transistors for reduced current collapse
Nela,Luca;Yildirim,HalilKerim;Erine,Catherine;VanErp,Remco;Xiang,Peng;Cheng,Kai;Matioli,Elison
IEEE Electron Device Letters, vol. 42, no. 1, pp. 86-89, Jan. 2021
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Tri-gate GaN junction HEMT
YunweiMa,MingXiao,ZhonghaoDu,XiaodongYan,KaiCheng,MichaelClavel,MantuK.Hudait,IvanKravchenko,HanWang,andYuhaoZhang
Appl. Phys. Lett. 117, 143506 (2020)
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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination
MingXiao,YunweiMa,KaiCheng,KaiLiu,AndyXie,EdwardBeam,YuCao,andYuhaoZhang
IEEE Electron Device Letters
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Realization of regular resonance mode in GaN-based polygonal microdisks on Si
MenghanLiu,PengChen,JingZhou,RuXu,XiaokangMao,ZiliXie,XiangqianXiu,DunjunChen,BinLiu,PingHan,YiShi,RongZhang,YoudouZheng,KaiCheng,andLiyangZhang
Journal of Applied Physics 127, 113102 (2020)
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