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For power application

• GaN-on-Si (100mm,150mm,200mm,300mm)

• D-mode and E-mode

• Breakdown Voltage available from 200V to 1200V

Product Specification

ItemsValues/Scope
SubstrateSi
Wafer diameter

100mm,150mm,200mm,300mm

Epi-layer thickness 2-7 μm
Wafer bow<30 μm, Typical
Surface MorphologyRMS<0.5nm in 5×5 μm²
Barrier

AlxGa1-xN, 0<X<1

Cap layerIn-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density

>9E12/cm² (20nm Al0.25GaN , 150mm)

Electron mobility

>1800 cm²/Vs (20nm Al0.25GaN, 150mm)

200mm GaN-on-Si Epiwafer

Defect MappingVertical Breakdown Behavior


2332323


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Sheet ResistanceMappingWafer Bow Mapping


tu1


图片1


Download the data table file >>