• GaN-on-Si (100mm,150mm,200mm,300mm)
• D-mode and E-mode
• Breakdown Voltage available from 200V to 1200V
Product Specification
| Items | Values/Scope |
| Substrate | Si |
| Wafer diameter | 100mm,150mm,200mm,300mm |
| Epi-layer thickness | 2-7 μm |
| Wafer bow | <30 μm, Typical |
| Surface Morphology | RMS<0.5nm in 5×5 μm² |
| Barrier | AlxGa1-xN, 0<X<1 |
| Cap layer | In-situ SiN or GaN (D-mode); p-GaN (E-mode) |
| 2DEG density | >9E12/cm² (20nm Al0.25GaN , 150mm) |
| Electron mobility | >1800 cm²/Vs (20nm Al0.25GaN, 150mm) |
| Defect Mapping | Vertical Breakdown Behavior |
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| Sheet ResistanceMapping | Wafer Bow Mapping |
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