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For RF application

• GaN-on-HR_Si (100mm,150mm,200mm)

• GaN-on-SiC(50.8mm,100mm,150mm)

• In-situ SiN/ Al(In)N/ GaN heterostructures

Product Specification

Items

Values/Scope

Substrate

HR_Si / SiC

Wafer diameter

100mm,150mm for SiC

 100mm,150mm,200mm for HR_Si

Epi-layer thickness2-3 μm
Wafer bow

<30 μm, Typical

Surface Morphology

RMS<0.5nm in 5×5 μm²

BarrierAlGaN or AlN or InAlN

Cap layer

In-situ SiN or GaN

150 AlGaN/GaN HEMT-on-SiC Epiwafer

Sheet Resistance

2DEG

Electron Mobility


1

Rsh = 291 Ω/□



2

2DEG = 1.17E13/cm²



3

μ = 1833 cm²/Vs


200 AlGaN/GaN HEMT-on-HR_Si Epiwafer

Sheet Resistance2DEGElectron Mobility


793998be7c7383189a2185c19206a28

Rsh = 282.2 Ω/□



6b58b5763bacaede99cf0ef5a9d15a5

2DEG = 1.24E13/cm²



ba285cdcc02f74f6f6d7a2dc58f32c6

μ = 1802 cm²/Vs



Download the data table file >>