• GaN-on-HR_Si (100mm,150mm,200mm)
• GaN-on-SiC(50.8mm,100mm,150mm)
• In-situ SiN/ Al(In)N/ GaN heterostructures
Product Specification
| Items | Values/Scope |
| Substrate | HR_Si / SiC |
| Wafer diameter | 100mm,150mm for SiC 100mm,150mm,200mm for HR_Si |
| Epi-layer thickness | 2-3 μm |
| Wafer bow | <30 μm, Typical |
| Surface Morphology | RMS<0.5nm in 5×5 μm² |
| Barrier | AlGaN or AlN or InAlN |
Cap layer | In-situ SiN or GaN |
| Sheet Resistance | 2DEG | Electron Mobility |
Rsh = 291 Ω/□ |
2DEG = 1.17E13/cm² |
μ = 1833 cm²/Vs |
| Sheet Resistance | 2DEG | Electron Mobility |
Rsh = 282.2 Ω/□ |
2DEG = 1.24E13/cm² |
μ = 1802 cm²/Vs |
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