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03
2014-07
Enkris Semiconductor Demonstrates High Voltage GaN HEMT Structures on 200mm Silicon with AIXTRON Reactor
Aachen/Suzhou, July 03, 2014 – Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon (GaN-on-Si) by using an AIXTRON CRIUS® II Close Coupled Showerhead® Reactor.
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