Micro LED News Release_News_Enkris Semiconductor Inc.

With the explosive growth of artificial intelligence and the exponential increase in computing power demand, data centers are requiring higher and higher bandwidth but without increasing power consumption further. The short-distance interconnect solution inside data center servers and racks is currently undergoing a historic shift of "optical-in, copper-out". Micro-LED optical devices, originally rooted in the display field, have emerged as a core light source technology for short-distance optical interconnects thanks to their potential for low power consumption and high-density enabling a “wide-and -slow” architecture side-stepping the increasing power consumption of faster SerDes links . While current micro-LED optical interconnects primarily rely on sapphire substrates suffering low bandwidth and high driving current density, Enkris Semiconductor has developed 8-12 inch GaN-on-Si Micro LED light source products, achieving a 3dB bandwidth of 1.6 GHz at a current density of 500 A/cm². The power consumption of the Micro-LED light source can be below 1 pJ/bit.

Leveraging years of accumulated expertise in GaN epitaxy and a CMOS-compatible Micro-LED process flow, Enkris Semiconductor has optimized the epitaxial structures, material qualities, defects in the active region and device design as well. By effectively suppressing the Quantum Confined Stark Effect (QCSE) in the quantum wells, the carrier recombination rate is significantly enhanced. In addition, the active region area has been reduced to lower device capacitance and minimize RC delay issues. In the collaboration between team of Enkris Semiconductor and Professor Lu Shulong's research group at Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences, a -3 dB cut-off frequency of 1.6 GHz was achieved under an ultra-low current injection condition of 500 A/cm², with device power consumption below 1 pJ/bit, placing it at an industry-leading level.

Figure 1: Left) Measured S21 Curve of Enkris’ Micro LED Bandwidth;

Right) Micro LED Light Source Bandwidth Benchmark

Using, 8”/12” Micro-LED on Si with high bandwidth paves the way for optical device integration on advanced node CMOS by using mature W2W or D2W bonding. This technology is compatible with existing hardware architectures and mainstream communication protocols used in high-band width memory, precisely filling the gap in short-range transmission. With its advantages of low power consumption, low heat generation, and no electromagnetic interference, it will accelerate the adoption of Micro-LED short-distance interconnects in data centers.

Enkris Semiconductor‌ was founded in 2012 and its headquarter is located in Suzhou Industrial Park. Enkris is focused on semiconductor material development and committed to providing high-quality GaN epitaxial material solutions for power electronics, displays, communications and other fields.

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