第2页_News_Enkris Semiconductor Inc.

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24

2019-01

Multi-channel tri-gate III-nitride high-electron-mobility transistors on silicon École Polytechnique Fédérale de Lausanne (EPFL) in Switzerland and Enkris Semiconductor Inc in China used a material structure consisting of five parallel layers of a 10nm aluminium gallium nitride (AlGaN) barrier, 1nm AlN spacer and 10nm GaN channel (Figure 1). The barrier was silicon doped at a partial level of 5x1018/cm3 to enhance conductivity ……（Please refer to http://www.semiconductor-today.com/news_items/2019/jan/ecole_240119.shtml for details）.
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03

2014-07

Enkris Semiconductor Demonstrates High Voltage GaN HEMT Structures on 200mm Silicon with AIXTRON Reactor Aachen/Suzhou, July 03, 2014 – Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon (GaN-on-Si) by using an AIXTRON CRIUS® II Close Coupled Showerhead® Reactor.
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