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Multi-channel tri-gate III-nitride high-electron-mobility transistors on silicon 2019-1-24
Researchers based in Switzerland and China have fabricated tri-gate metal-oxide-semiconductor high-electron-mobility transistors with five III-nitride semiconductor channel levels, boosting electrostatic control and drive current [Jun Ma et al, Appl. Phys. Lett., vol113, p242102, 2018].
Enkris Semiconductor Demonstrates High Voltage GaN HEMT Structures on 200mm Silicon with AIXTRON Reactor 2014-07-03
Aachen/Suzhou, July 03, 2014 – Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor)
