Location:Home > News
CMOS Compatible High-voltage GaN-on-Silicon HEMT reaches 300mm 2021-9-23
An GaN wafer epi-foundry with headquarters located at Suzhou Industrial Park, China, Enkris Semiconductor announced that it has demonstrated a series of high quality 300mm GaN-on-Si HEMT epiwafers of excellent thickness uniformity and low wafer bow for 200V, 650V and 1200V power applications, paving the way for device processing using more sophisticated 300mm CMOS-compatible lines.
Multi-channel tri-gate III-nitride high-electron-mobility transistors on silicon 2019-1-24
Researchers based in Switzerland and China have fabricated tri-gate metal-oxide-semiconductor high-electron-mobility transistors with five III-nitride semiconductor channel levels, boosting electrostatic control and drive current [Jun Ma et al, Appl. Phys. Lett., vol113, p242102, 2018].
Enkris Semiconductor Demonstrates High Voltage GaN HEMT Structures on 200mm Silicon with AIXTRON Reactor 2014-07-03
Aachen/Suzhou, July 03, 2014 – Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor)
