GaN, with its superior property, is expected to the most promising material choice for next generation device. GaN-based devices can achieve low specific Ron and fast switching/oscillation simultaneously because of its high critical electrical field. Enkris Semiconductor is committed to developing high quality GaN epi-wafers for RF, power electronics and optoelectronics applications.
GaN-on-Si technology has been considered as the best choice of GaN power electronics as it leverages the device performance and the manufacturing cost. The success of GaN epitaxy on large size Si substrates promises a remarkable cost reduction and a possibility of mass production based on CMOS-compatible technology. Enkris achieved tremendous progress in this technology. In 2014 Enkris had successfully demonstrated high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon. This innovation paved the way for the whole industry's commercialization and scalability.
Enkris current product family includes GaN-on-Silicon, GaN-on- SiC , GaN-on-Sapphire and GaN-on-GaN epi wafers with varied sizes. Enkris' HEMT wafers have been optimized with extremely low buffer leakage and low buffer traps, which are the key features for high performance GaN devices. The LED on Si and Sapphire wafers have excellent crystalline quality and low dislocation density.