晶湛半导体_Innovation

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Innovation

We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here.

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A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen
IEEE Electron Device Lett. 37, 377 (2016)
Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, and Hong-yu Yu
AIP Advances 6, 095021 (2016)
Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Kai Cheng, Hong-yu Yu
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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