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Innovation

We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here.

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, and Hong-yu Yu
AIP Advances 6, 095021 (2016)
Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Kai Cheng, Hong-yu Yu
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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