Location:Home > Innovation
820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
R. A. Khadar, C. Liu, L. Zhang, P. Xiang, K. Cheng, and E. MatioliGate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
Ning Xu, Ronghui Hao, Fu Chen, Xiaodong Zhang, Hui Zhang, Peipei Zhang2, Xiaoyu Ding, Liang Song, Guohao Yu, Kai Cheng, Yong Cai and Baoshun ZhangThe Growth Technology of High-Voltage GaN on Silicon
Peng Xiang, Liyang Zhang, Kai ChengGallium Nitride Power Devices; Edited By Hongyu Yu, Tianli Duan, Jenny Stanford Publishing
Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature
Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli Duan, Lingli Jiang, Elina Iervolino, Kai Cheng and Hongyu Yu