晶湛半导体_Innovation

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Innovation

We work with outstanding universities, research centres and industrial partners around the world in an open and collaborative way. So far, we have grown various customised GaN epi-structures to meet the specific design of our customers and partners. More details can be found in the publications listed here.

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820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
R. A. Khadar, C. Liu, L. Zhang, P. Xiang, K. Cheng, and E. Matioli
IEEE Electron Device Letters, 39(3), 401 – 404 (2018)
720V/0.35mΩ·cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si substrates and buffer layers
Yuhao Zhang, Mengyang Yuan, Nadim Chowdhury, Kai Cheng, and Tomas Palacios
IEEE Electron Device Letters, 39(5), 715-718 (2018)
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, and Elison Matioli
Appl. Phys. Lett. 113, 242102 (2018)
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
Ning Xu, Ronghui Hao, Fu Chen, Xiaodong Zhang, Hui Zhang, Peipei Zhang2, Xiaoyu Ding, Liang Song, Guohao Yu, Kai Cheng, Yong Cai and Baoshun Zhang
Appl. Phys. Lett. 113, 152104 (2018)
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
Tian Li Duan, Ji Sheng Pan, Ning Wang, Kai Cheng & Hong Yu Yu
Nanoscale Research Letters volume 12, 499 (2017)
The Growth Technology of High-Voltage GaN on Silicon
Peng Xiang, Liyang Zhang, Kai Cheng
Gallium Nitride Power Devices; Edited By Hongyu Yu, Tianli Duan, Jenny Stanford Publishing
Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature
Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli Duan, Lingli Jiang, Elina Iervolino, Kai Cheng and Hongyu Yu
AIP Advances 7, 095317 (2017)
A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen
IEEE Electron Device Lett. 37, 377 (2016)

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