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Multi-channel nanowire devices for efficient power conversion
L. Nela, J. Ma, C. Erine, P. Xiang, T.-H. Shen, V. Tileli, T. Wang, K. Cheng & E. MatioliRegrowth-Free GaN-Based Complementary Logic on a Si Substrate
N. Chowdhury, Q. Xie, M. Yuan, K. Cheng, H. W. Then and T. Palacios,IEEE Electron Device Letters, vol. 41, no. 6, pp. 820-823, June 2020
IEEE Electron Device Letters, vol. 41, no. 3, pp. 457-460, March 2020
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Xiao, Ming; Du, Zhonghao; Xie, Jinqiao; Beam, Edward; Yan, Xiaodong; Cheng, Kai; Wang, Han; Cao, Yu; Zhang, Yuhao;Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si
Liu, Meng-Han; Chen, Peng; Xie, Zi-Li; Xiu, Xiang-Qian; Chen, Dun-Jun; Liu, Bin; Han, Ping; Shi, Yi; Zhang, Rong; Zheng, You-Dou; Cheng, Kai; Zhang, Liyang;High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si
Liu, Menghan; Chen, Peng; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Liu, Bin; Han, Ping; Shi, Yi; Zhang, Rong; Zheng, Youdou; Cheng, Kai; Zhang, Liyang;Conformal passivation of Multi-Channel GaN power transistors for reduced current collapse
Nela, Luca; Yildirim, Halil Kerim; Erine, Catherine; Van Erp, Remco; Xiang, Peng; Cheng, Kai; Matioli, ElisonIEEE Electron Device Letters, vol. 42, no. 1, pp. 86-89, Jan. 2021